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Infrared study of oxygen precipitates in Czochralski grown silicon.
- Source :
- Journal of Applied Physics; 5/15/1991, Vol. 69 Issue 10, p7251, 5p
- Publication Year :
- 1991
-
Abstract
- Presents information on a study which investigated oxygen precipitation in the bulk of silicon wafers by using micro-Fourier transform infrared spectroscopy. Methodology of the study; Results and discussion; Conclusions.
- Subjects :
- SEMICONDUCTOR wafers
SILICON
INFRARED spectroscopy
PRECIPITATION (Chemistry)
OXYGEN
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 69
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7654403
- Full Text :
- https://doi.org/10.1063/1.347622