Chemical etch rates in HF solutions as a function of thickness of thermal SiO2 and buried SiO2 formed by oxygen implantation.

Focuses on a study that discussed chemical etch rates in diluted hydrogen fluoride (HF) or a mixture of HF, water and HNO[sub3] on conventional thermal silicon oxides. Features of the multi-implanted samples; Implication of accurate mechanical thickness measurements; Function of oxide thickness.