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Annealing behavior of photoconductance relating to electron-irradiation-induced defects in semi-insulating GaAs.
- Source :
- Journal of Applied Physics; 7/15/1991, Vol. 70 Issue 2, p1051, 3p, 4 Graphs
- Publication Year :
- 1991
-
Abstract
- Deals with a study which examined the annealing behavior of photoconductance in semi-insulating gallium arsenide crystals in terms of the electron-irradiation-induced defects. Techniques used in studying point defects; Information on the materials; Peak of photoluminescence emissions.
- Subjects :
- GALLIUM arsenide
CRYSTAL defects
PHOTOLUMINESCENCE
ANNEALING of crystals
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 70
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7653823
- Full Text :
- https://doi.org/10.1063/1.349693