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Ionized Mg doping in molecular-beam epitaxy of GaAs.
- Source :
- Journal of Applied Physics; 2/15/1986, Vol. 59 Issue 4, p1092, 4p, 1 Diagram, 2 Charts, 4 Graphs
- Publication Year :
- 1986
-
Abstract
- Presents information on a study which examined the magnesium doping in molecular-beam epitaxy of gallium-arsenic using ionized magnesium beams. Experimental procedures; Results and discussion.
- Subjects :
- GALLIUM compounds
MOLECULAR beam epitaxy
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 59
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7653593
- Full Text :
- https://doi.org/10.1063/1.336545