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The high-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon.
- Source :
- Journal of Applied Physics; 12/15/1988, Vol. 64 Issue 12, p6721, 6p
- Publication Year :
- 1988
-
Abstract
- Presents information on a study which evaluated the feasibility of suppressing silicide formation by incorporating nitrogen into the chemically vapor deposited tungsten film prior to subsequent high-temperature processing. Methodology of the study; Results and discussion; Conclusion.
- Subjects :
- SILICIDES
TUNGSTEN
THIN films
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 64
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7653356
- Full Text :
- https://doi.org/10.1063/1.342003