Electrical effects of atomic hydrogen incorporation in GaAs-on-Si.

Authors :: Zavada, J. M.
Pearton, S. J.
Wilson, R. G.
Wu, C. S.
Stavola, Michael
Ren, F.
Lopata, J.
Dautremont-Smith, W. C.
Novak, S. W.
Source :: Journal of Applied Physics; 1/1/1989, Vol. 65 Issue 1, p347, 7p, 2 Charts, 7 Graphs
Publication Year :: 1989
Abstract: Presents a study that introduced atomic hydrogen by two methods into gallium arsenide (GaAs) layers epitaxially grown on silicon substrates. Correlation of the amount of hydrogen incorporated during plasma exposures with the amount of initial disorder in the GaAs layer; Use of current-voltage measurements in titanium-platinum-gold Schottky diode structures; Effects of the defects in the GaAs layer.