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Characterization of hydrogenated amorphous silicon by capacitance-voltage and surface photovoltage measurements using liquid Schottky barriers.
- Source :
- Journal of Applied Physics; 3/1/1987, Vol. 61 Issue 5, p1916, 12p
- Publication Year :
- 1987
-
Abstract
- Presents information on a study which investigated the electrical characterization of amorphous silicon (a-Si:H) using a liquid Schottky barrier. Advantages of using the surface photovoltage method using a liquid Schottky barrier; Properties of a-Si:H and crystalline (c) Si contacts with redox couple of quinone-hydroquinone; Application of capacitance-voltage measurements in liquid Schottky barrier diodes.
- Subjects :
- AMORPHOUS substances
SILICON
SCHOTTKY barrier diodes
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 61
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7648896
- Full Text :
- https://doi.org/10.1063/1.338038