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WSi0.11 Schottky gates for GaAs metal semiconductor field-effect transistors.
- Source :
- Journal of Applied Physics; 3/1/1987, Vol. 61 Issue 5, p2054, 5p
- Publication Year :
- 1987
-
Abstract
- Presents information on a study which described the utilization of tungsten silicon to form gates for gallium arsenide (GaAs) metal semiconductor field-effect transistors (FET). Discussion on diode fabrication and measurements; Film characteristics; Examination of the GaAs surface using x-ray photoemission spectroscopy; Analysis of the electrical properties of large Schottky diodes; Fabrication of various FET properties.
- Subjects :
- METAL semiconductor field-effect transistors
GALLIUM
ARSENIDES
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 61
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7648876
- Full Text :
- https://doi.org/10.1063/1.338004