Ion implantation and dry etching characteristics of InGaAsP (λ=1.3 μm).

Examines the electrical activation characteristics of silicon and beryllium ions implanted into indium-gallium arsenide-phosphrus grown lattice matched to indium-phosphorus metalorganic molecular beam epitaxy as a function of ion dose, annealing time and temperature. Attainment of maximum doping concentrations of the ions; Activation energies of the ions; Use of multiple energy fluorine and hydrogen ions to produce high resistance layers.