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Growth of ZnSe on Ge(100) substrates by molecular-beam epitaxy.
- Source :
- Journal of Applied Physics; 8/1/1987, Vol. 62 Issue 3, p885, 5p
- Publication Year :
- 1987
-
Abstract
- Investigates the epitaxial growth of zinc selenide on germanium substrates by molecular-beam epitaxy. Physical properties of the material; Details on the experiment; Discussion on the results of the study.
- Subjects :
- ZINC selenide
EPITAXY
GERMANIUM
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 62
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7641502
- Full Text :
- https://doi.org/10.1063/1.339694