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A comparative study of Si- and GaAs-based devices for repetitive, high-energy, pulsed switching applications.
- Source :
- Journal of Applied Physics; 4/1/1992, Vol. 71 Issue 7, p3586, 7p, 2 Diagrams, 6 Graphs
- Publication Year :
- 1992
-
Abstract
- Examines the switching characteristics of silicon and GaAs-based devices operating in the low- and high-field regimes. Characteristics of an ideal power switch; Applications of high-power switches; Steady-state analysis of silicon- and GaAs-based majority carrier devices; Advantage of photoconductive switches over optothyristors.
- Subjects :
- SWITCHING theory
ELECTRIC power systems
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 71
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7641280
- Full Text :
- https://doi.org/10.1063/1.350915