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The DX center in Si-planar-doped AlxGa1-xAs (x=0.32).
- Source :
- Journal of Applied Physics; 4/1/1991, Vol. 69 Issue 7, p4060, 4p, 4 Graphs
- Publication Year :
- 1991
-
Abstract
- Focuses on a study which examined the photoluminescence properties of the DX center in periodically δ-doped Si-Al[subx]Ga[sub1-x]As to test the validity of the small lattice relaxation model of the DX center. Experimental procedures; Description of the typical photoluminescence spectra; Discussion of the photoluminescence of the δ-doped superlattice.
- Subjects :
- PHOTOLUMINESCENCE
DX centers (Solid state physics)
MODULAR lattices
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 69
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7641204
- Full Text :
- https://doi.org/10.1063/1.348417