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Photoreflectance studies of GaAs containing a Si-δ-doping layer.
- Source :
- Journal of Applied Physics; 4/1/1991, Vol. 69 Issue 7, p4075, 5p, 7 Graphs
- Publication Year :
- 1991
-
Abstract
- Provides information on a study which examined the electronic structure of n-type gallium arsenic samples using photoreflectance spectroscopy. Franz-Keldysh oscillations; Impact of surface charges on the electric field; Effect of parallel fields on the oscillatory structure.
- Subjects :
- REFLECTANCE spectroscopy
GALLIUM
ARSENIC
OSCILLATIONS
ELECTRIC fields
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 69
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7641101
- Full Text :
- https://doi.org/10.1063/1.348419