Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum-well ridge-waveguide lasers.

Authors :: Hu, S. Y.
Corzine, S. W.
Law, K.-K.
Young, D. B.
Gossard, A. C.
Coldren, L. A.
Merz, J. L.
Source :: Journal of Applied Physics; 10/15/1994, Vol. 76 Issue 8, p4479, 9p, 2 Diagrams, 8 Graphs
Publication Year :: 1994
Abstract: Presents information on a study that measured the increase in threshold currents due to lateral carrier diffusion in InGaAs/AlGaAs quantum-well (QW) ridge-waveguide laser diodes. Sample preparation and characterization; Optical gain calculation for the InGaAs QW; Conclusions.

Subjects :: QUANTUM wells
ENERGY-band theory of solids
DIFFUSION
LASERS
DIODES

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