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X-ray diffraction analysis of Si1-xGex/Si superlattices.

Authors :
Mai, Z. H.
Ouyang, J. T.
Cui, S. F.
Li, J. H.
Wang, C. Y.
Li, C. R.
Source :
Journal of Applied Physics; 10/15/1992, Vol. 72 Issue 8, p3474, 6p, 4 Charts, 6 Graphs
Publication Year :
1992

Abstract

Presents a study which investigated the Si[sub1-subx]Ge[subx]/Si strained-layer superlattices grown by molecular beam epitaxy on silicon substrates by x-ray double crystal diffraction and x-ray grazing incidence diffraction. Components of the superlattices; Discussion on lattice relaxation; Results of double-crystal diffraction.

Details

Language :
English
ISSN :
00218979
Volume :
72
Issue :
8
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7637821
Full Text :
https://doi.org/10.1063/1.351423