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X-ray diffraction analysis of Si1-xGex/Si superlattices.
- Source :
- Journal of Applied Physics; 10/15/1992, Vol. 72 Issue 8, p3474, 6p, 4 Charts, 6 Graphs
- Publication Year :
- 1992
-
Abstract
- Presents a study which investigated the Si[sub1-subx]Ge[subx]/Si strained-layer superlattices grown by molecular beam epitaxy on silicon substrates by x-ray double crystal diffraction and x-ray grazing incidence diffraction. Components of the superlattices; Discussion on lattice relaxation; Results of double-crystal diffraction.
- Subjects :
- SUPERLATTICES
MOLECULAR beam epitaxy
SILICON
OPTICAL diffraction
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 72
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7637821
- Full Text :
- https://doi.org/10.1063/1.351423