Defects and leakage currents in BF2-implanted preamorphized silicon.

Presents a study that preamorphized the surface of single-crystal silicon prior to the implantation of low-energy boron-fluorine using high-dose implants. Formation of preamorphization results in shallow junction formation with minimal channeling of the boron; Measurements of leakage current and deep-level defects; Types of electrically active defects.