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Misfit strain, relaxation, and band-gap shift in GaxIn1-xP/InP epitaxial layers.

Authors :
Bensaada, A.
Chennouf, A.
Cochrane, R. W.
Graham, J. T.
Leonelli, R.
Masut, R. A.
Source :
Journal of Applied Physics; 3/15/1994, Vol. 75 Issue 6, p3024, 6p, 1 Diagram, 2 Charts, 5 Graphs
Publication Year :
1994

Abstract

Focuses on a study which investigated the structural and optoelectronic properties of thick gallium indium phosphide epilayers on sulfur-doped indium phosphide substrates. Experimental procedures; Discussion on x-ray diffraction of the epilayers; Optical absorption and photoluminescence of indium phosphides.

Details

Language :
English
ISSN :
00218979
Volume :
75
Issue :
6
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7634204
Full Text :
https://doi.org/10.1063/1.356147