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Misfit strain, relaxation, and band-gap shift in GaxIn1-xP/InP epitaxial layers.
- Source :
- Journal of Applied Physics; 3/15/1994, Vol. 75 Issue 6, p3024, 6p, 1 Diagram, 2 Charts, 5 Graphs
- Publication Year :
- 1994
-
Abstract
- Focuses on a study which investigated the structural and optoelectronic properties of thick gallium indium phosphide epilayers on sulfur-doped indium phosphide substrates. Experimental procedures; Discussion on x-ray diffraction of the epilayers; Optical absorption and photoluminescence of indium phosphides.
- Subjects :
- GALLIUM compounds
INDIUM phosphide
X-ray diffraction
PHOTOLUMINESCENCE
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 75
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7634204
- Full Text :
- https://doi.org/10.1063/1.356147