Back to Search
Start Over
Low-temperature annealing of shallow arsenic-implanted layers.
- Source :
- Journal of Applied Physics; 3/15/1987, Vol. 61 Issue 6, p2189, 6p, 7 Diagrams
- Publication Year :
- 1987
-
Abstract
- Presents a study which examined the electrical properties of silicon layers implanted with 10 kiloelectronvolts arsenic. Details of the differential Hall-effect profiling; Results; Conclusions.
- Subjects :
- SILICON
ARSENIC
ANNEALING of metals
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 61
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7633832
- Full Text :
- https://doi.org/10.1063/1.337979