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Properties of high-purity AlxGa1-xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursors.
- Source :
- Journal of Applied Physics; 7/15/1987, Vol. 62 Issue 2, p632, 12p, 1 Diagram, 10 Graphs
- Publication Year :
- 1987
-
Abstract
- Examines the properties of high-purity Al[subx]Ga[sub1-x]As grown by the metal-organic vapor-phase-epitaxy (MOVPE) technique using methyl precursors. Information on the growth and characterization of high-purity MOVPE semiconductor; Electrical properties of the semiconductor; Optical properties of semiconductor.
- Subjects :
- SEMICONDUCTORS
METAL organic chemical vapor deposition
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 62
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7631647
- Full Text :
- https://doi.org/10.1063/1.339792