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Segregation and transport coefficients of impurities at the Si/SiO2 interface.
- Source :
- Journal of Applied Physics; 2/15/1987, Vol. 61 Issue 4, p1553, 3p, 1 Diagram, 5 Graphs
- Publication Year :
- 1987
-
Abstract
- Presents a study which gave the segregation and transport coefficients at the Si/SiO[sub2] interface. Significance of the impurity redistribution across the Si/SiO[sub2] interface to the fabrication of scaled integrated circuits; Analytical model of impurity transport at an oxidizing Si/SiO[sub2] interface; Temperature dependencies of the segregation and transport coefficients.
- Subjects :
- INTERFACE circuits
INTEGRATED circuits
ELECTRONIC circuits
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 61
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7628735
- Full Text :
- https://doi.org/10.1063/1.338089