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Annealing behavior of Ga and Ge antisite defects in neutron-transmutation-doped semi-insulating GaAs.
- Source :
- Journal of Applied Physics; 12/15/1991, Vol. 70 Issue 12, p7315, 3p
- Publication Year :
- 1991
-
Abstract
- Examines the evaluation of Ga[subAs] and Ge[subAs] antisite defects in neutron-transmutation-doped semi-insulating gallium arsenide by the photoluminescence (PL) measurements. Experiment; Temperature dependence of PL spectra for samples annealed after neutron irradiation.
- Subjects :
- GALLIUM arsenide
NEUTRON transmutation doping of semiconductors
PHOTOLUMINESCENCE
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 70
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7628131
- Full Text :
- https://doi.org/10.1063/1.349749