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Trapping levels in Bi12SiO20 crystals.
- Source :
- Journal of Applied Physics; 8/15/1994, Vol. 76 Issue 4, p2216, 4p, 1 Chart, 5 Graphs
- Publication Year :
- 1994
-
Abstract
- Focuses on a study which examined the activation energy of trapping levels by different laboratories using various methods. Features of Bi[sub12]SiO[sub20] single crystals; Areas in which the crystals are used; Considerations in the analysis of single crystals.
- Subjects :
- CRYSTALS
CRYSTALLOGRAPHY
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 76
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7627426
- Full Text :
- https://doi.org/10.1063/1.357637