Surface segregation effects of In in GaAs.

Authors :: Dosanjh, S. S.
Zhang, X. M.
Sansom, D.
Harris, J. J.
Fahy, M. R.
Joyce, B. A.
Clegg, J. B.
Source :: Journal of Applied Physics; 8/15/1993, Vol. 74 Issue 4, p2481, 5p, 1 Black and White Photograph, 4 Charts, 3 Graphs
Publication Year :: 1993
Abstract: Presents a study which assessed surface segregation of indium in gallium arsenide (GaAs) during molecular beam epitaxial growth of InAs monolayers between GaAs layers using photoluminescence (PL), secondary-ion mass spectroscopy (SIMS) and cross-sectional transmission electron microscopy measurements. Details of an experiment on GaAs semi-insulating substrates; Description of the PL peaks relating to the InAs layers; Result of SIMS in surface segregation.