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Strain effects and band offsets in GaAs/InGaAs strained layered quantum structures.
- Source :
- Journal of Applied Physics; 8/15/1989, Vol. 66 Issue 4, p1739, 9p, 2 Diagrams, 4 Charts, 6 Graphs
- Publication Year :
- 1989
-
Abstract
- Focuses on strained single quantum wells composed of gallium arsenide (GaAs)/indium-gallium-arsenic (InGaAs)/GaAs grown by molecular beam epitaxy. Application of photoreflectance by photoluminescence spectroscopy; Empirical equation describing the nonstrained band-gap energy function; Optical properties of the InGaAs/GaAs system.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 66
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7626489
- Full Text :
- https://doi.org/10.1063/1.344395