Characterization of shallow (Rp <20 nm) As- and B-implanted and electron-beam annealed silicon.

Authors :: McMillan, G. B.
Shannon, J. M.
Clegg, J. B.
Ahmed, H.
Source :: Journal of Applied Physics; 4/15/1986, Vol. 59 Issue 8, p2694, 10p, 1 Diagram, 3 Charts, 10 Graphs
Publication Year :: 1986
Abstract: Presents a study which showed the annealing characteristics of shallow arsenic- and boron-implanted layers. Comparison of isothermal annealing and furnace annealing; Annealing of ion-implanted material profile; Objectives of diffusion modelling.

Full Text Access

Tools