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Window layer for current spreading in AlGaInP light-emitting diode.
- Source :
- Journal of Applied Physics; 9/1/1994, Vol. 76 Issue 5, p2603, 9p, 1 Black and White Photograph, 6 Diagrams, 1 Chart, 5 Graphs
- Publication Year :
- 1994
-
Abstract
- Focuses on a study which investigated the current spreading effect and other characteristics of an aluminum gallium indium phosphide double-heterojunction (DH) light-emitting diode via numerical calculation and experimental results. Application of the finite difference method; Approximation of Poisson's equation and continuity equations; Modification of the DH structure.
- Subjects :
- ELECTRIC currents
GALLIUM
ALUMINUM
DIODES
PHOSPHIDES
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 76
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7622202
- Full Text :
- https://doi.org/10.1063/1.357556