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Rotational slip in III-V heterostructures grown by molecular-beam epitaxy.
- Source :
- Journal of Applied Physics; 9/1/1988, Vol. 64 Issue 5, p2746, 3p, 2 Diagrams, 1 Chart, 2 Graphs
- Publication Year :
- 1988
-
Abstract
- Reports on the observation of rotational slip as a mechanism for relieving strain in III-V heterostructures grown by molecular beam epitaxy. Impact of rotational slip on the epitaxial layer; Relationship between the strain and the critical layer thickness; Description of rotational slip on planes.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 64
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7621722
- Full Text :
- https://doi.org/10.1063/1.342496