Hole diffusion length investigation by photon and electron excitation of GaAs Schottky barriers.

Examines a hole diffusion length in liquid-encapsulated-Czochralski GaAs monocrystals, using photon and electron bombardment through semitransparent gold and chromium Schottky electrodes. Relationship of the diffusion length investigation carried out by the steady-state surface photovoltage and the scanning electron microscope electron-beam-induced current with the spectral quantum efficiency of Schottky diodes; Methods used to determine the diffusion length L and its equivalent parameter.