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Electrical characterization of growth-induced defects in n -GaN.
- Source :
- Radiation Effects & Defects in Solids; Dec2001, Vol. 156 Issue 1-4, p255-259, 5p
- Publication Year :
- 2001
Details
- Language :
- English
- ISSN :
- 10420150
- Volume :
- 156
- Issue :
- 1-4
- Database :
- Complementary Index
- Journal :
- Radiation Effects & Defects in Solids
- Publication Type :
- Academic Journal
- Accession number :
- 75794794
- Full Text :
- https://doi.org/10.1080/10420150108216902