Silicon amorphization model in the process of ion implantation.

Details

Language :

English

ISSN :

10420150

Volume :

113

Issue :

4

Database :

Complementary Index

Journal :

Radiation Effects & Defects in Solids

Publication Type :

Academic Journal

Accession number :

75786600

Full Text :

https://doi.org/10.1080/10420159008213072