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On the nature of the radiation defects with level E c –0.22 eV in n-type silicon.
- Source :
- Radiation Effects; Jan1985, Vol. 87 Issue 4, p147-154, 8p
- Publication Year :
- 1985
-
Abstract
- Radiation-induced accumulation and annealing processes of radiation defects with level Ec–0,22 eV in silicon of various perfection are analysed and it is concluded that they consist of oxygen and two vacancies (oxygen-divacancy complex). [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00337579
- Volume :
- 87
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Radiation Effects
- Publication Type :
- Periodical
- Accession number :
- 75429214
- Full Text :
- https://doi.org/10.1080/01422448608209715