Light-Induced Modulation in Resistance Switching of Carbon Nanotube/ BiFeO 3 /Pt Heterostructure.

We report a light-induced modulation effect in resistance switching of proposed carbon nanotube (CNT)/BiFeO3/Pt heterostructure. XRD, Raman, SEM, and AFM measurements confirm the quality of the BiFeO3 and CNT thin films achieved. Photovoltaic and resistance switching effects are identified in the proposed device structure. Resistance switching upon forward bias can be obviously modulated with light illumination. Dual asymmetric junctions in the heterojunction can be addressed as a critical factor. Our work indicates that CNT/BiFeO3/Pt heterostructure can be utilized in the light-coupled memory and I/O related applications. [ABSTRACT FROM AUTHOR]