Cite
Electrical characteristics of polycrystalline silicon thin film transistors using the Cu-field aided lateral crystallization process.
MLA
Kwon, Se-Youl, et al. “Electrical Characteristics of Polycrystalline Silicon Thin Film Transistors Using the Cu-Field Aided Lateral Crystallization Process.” Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures, vol. 20, no. 4, July 2002, pp. 1427–30. EBSCOhost, https://doi.org/10.1116/1.1491552.
APA
Kwon, S.-Y., Park, K.-W., Lee, J.-B., & Choi, D.-K. (2002). Electrical characteristics of polycrystalline silicon thin film transistors using the Cu-field aided lateral crystallization process. Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures, 20(4), 1427–1430. https://doi.org/10.1116/1.1491552
Chicago
Kwon, Se-Youl, Kyoung-Wan Park, Jae-Bok Lee, and Duck-Kyun Choi. 2002. “Electrical Characteristics of Polycrystalline Silicon Thin Film Transistors Using the Cu-Field Aided Lateral Crystallization Process.” Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures 20 (4): 1427–30. doi:10.1116/1.1491552.