Ultrathin nitrided-nanolaminate (Al2O3/ZrO2/Al2O3) for metal-oxide-semiconductor gate dielectric applications.

Details

Language :

English

ISSN :

10711023

Volume :

20

Issue :

3

Database :

Complementary Index

Journal :

Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures

Publication Type :

Academic Journal

Accession number :

74345486

Full Text :

https://doi.org/10.1116/1.1481864