Electrical properties of molecular beam epitaxially grown AlxGa1-xSbyAs1-y and its application in InP-based high electron mobility transistors.

Details

Language :

English

ISSN :

10711023

Volume :

19

Issue :

4

Database :

Complementary Index

Journal :

Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures

Publication Type :

Academic Journal

Accession number :

74345023

Full Text :

https://doi.org/10.1116/1.1376382