Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths.

Details

Language :

English

ISSN :

10711023

Volume :

18

Issue :

6

Database :

Complementary Index

Journal :

Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures

Publication Type :

Academic Journal

Accession number :

74344626

Full Text :

https://doi.org/10.1116/1.1321286