Erratum: 'Ion-etch produced damage on InAs(100) studied through collective-mode electronic Raman scattering' [J. Vac. Sci. Technol. B 18, 144 (2000)].

Details

Language :

English

ISSN :

10711023

Volume :

18

Issue :

4

Database :

Complementary Index

Journal :

Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures

Publication Type :

Academic Journal

Accession number :

74344509

Full Text :

https://doi.org/10.1116/1.1306300