Low-temperature molecular beam epitaxy of GaAs: A theoretical investigation of antisite incorporation and reflection high-energy diffraction oscillations.

Details

Language :

English

ISSN :

10711023

Volume :

17

Issue :

3

Database :

Complementary Index

Journal :

Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures

Publication Type :

Academic Journal

Accession number :

74343667

Full Text :

https://doi.org/10.1116/1.590727