New complimentary metal-oxide semiconductor technology with self-aligned Schottky source/drain and low-resistance T gates.

Details

Language :

English

ISSN :

10711023

Volume :

15

Issue :

6

Database :

Complementary Index

Journal :

Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures

Publication Type :

Academic Journal

Accession number :

74342563

Full Text :

https://doi.org/10.1116/1.589730