Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411)A GaAs substrates by molecular beam epitaxy.

Details

Language :

English

ISSN :

10711023

Volume :

12

Issue :

2

Database :

Complementary Index

Journal :

Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures

Publication Type :

Academic Journal

Accession number :

74340174

Full Text :

https://doi.org/10.1116/1.587082