Plasma deposited SiO2 for planar self-aligned gate metal-insulator-semiconductor field effect transistors on semi-insulating InP.

Details

Language :

English

ISSN :

10711023

Volume :

12

Issue :

1

Database :

Complementary Index

Journal :

Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures

Publication Type :

Academic Journal

Accession number :

74340056

Full Text :

https://doi.org/10.1116/1.587169