The origins and elimination of oval defects in GaAs layers grown by molecular beam epitaxy.

Details

Language :

English

ISSN :

07342101

Volume :

9

Issue :

3

Database :

Complementary Index

Journal :

Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films

Publication Type :

Academic Journal

Accession number :

74331041

Full Text :

https://doi.org/10.1116/1.577329