Comparison of damage in the dry etching of GaAs by conventional reactive ion etching and by reactive ion etching with an electron cyclotron resonance generated plasma.

Details

Language :

English

ISSN :

0734211X

Volume :

7

Issue :

6

Database :

Complementary Index

Journal :

Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena

Publication Type :

Academic Journal

Accession number :

74326171

Full Text :

https://doi.org/10.1116/1.584512