Growth condition studies of pseudomorphic InGaAs/GaAs strained layer structures and InGaAs/AlGaAs high electron mobility transistor layer properties.

Details

Language :

English

ISSN :

0734211X

Volume :

7

Issue :

2

Database :

Complementary Index

Journal :

Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena

Publication Type :

Academic Journal

Accession number :

74325867

Full Text :

https://doi.org/10.1116/1.584751