Molecular-beam epitaxy of CrSi2 on Si(111).

Authors :: Fathauer, R. W.
Grunthaner, P. J.
Lin, T. L.
Chang, K. T.
Mazur, J. H.
Jamieson, D. N.
Source :: Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1988, Vol. 6 Issue 2, p708-712, 5p
Publication Year :: 1988

Language :: English
ISSN :: 0734211X
Volume :: 6
Issue :: 2
Database :: Complementary Index
Journal :: Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena
Publication Type :: Academic Journal
Accession number :: 74325488
Full Text :: https://doi.org/10.1116/1.584352