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SiO2/InP interfaces with reduced interface state density.
- Source :
- Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1984, Vol. 2 Issue 3, p584-587, 4p
- Publication Year :
- 1984
Details
- Language :
- English
- ISSN :
- 0734211X
- Volume :
- 2
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena
- Publication Type :
- Academic Journal
- Accession number :
- 74324336
- Full Text :
- https://doi.org/10.1116/1.582843