Characterization of atomic-layer-deposited hafnium oxide/SiON stacked-gate dielectrics.

Details

Language :

English

ISSN :

10711023

Volume :

21

Issue :

5

Database :

Complementary Index

Journal :

Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures

Publication Type :

Academic Journal

Accession number :

74322103

Full Text :

https://doi.org/10.1116/1.1603286