A Contraction Method for Locating All the DC Solutions of Circuits Containing Bipolar Transistors.

The paper is devoted to the analysis of diode-transistor circuits having multiple DC solutions. The transistors are characterized by the Ebers-Moll model and the circuits are described by the Sandberg-Willson equation, without any piecewise-linear approximations. A new method for finding bounds on the location of all the solutions is offered. The method contracts a hyperrectangular region that includes the solutions in a systematic manner, considering in succession all the individual equations. It does not require much computation power and is very fast. The method is very useful as a preliminary step of the algorithms for finding all the DC solutions, making them more efficient. A numerical example is given to illustrate the proposed approach. [ABSTRACT FROM AUTHOR]