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Strain-induced topological insulating behavior in ternary chalcogenide Ge2Sb2Te5.
- Source :
- Europhysics Letters; Jan2012, Vol. 97 Issue 2, pp1-p6, 6p
- Publication Year :
- 2012
-
Abstract
- We unraveled the strain-induced topological insulating behavior in Ge<subscript>2</subscript>Sb<subscript>2</subscript>Te<subscript>5</subscript> (GST) by means of ab initio calculations. The semiconductor-to-topological-insulator (TI) transition of Ge<subscript>2</subscript>Sb<subscript>2</subscript>Te<subscript>5</subscript> were induced by the strains along the 〈100〉 and 〈110〉 direction as well as the shear strains. Ge<subscript>2</subscript>Sb<subscript>2</subscript>Te<subscript>5</subscript> exhibits three types of TI-characterized conducting surface states: the single Dirac cone feature, the odd band-type and the Bi<subscript>2</subscript>Se<subscript>3</subscript>-type. The physical origin of the semiconductor-TI transition is the strain-induced inversion of the characterizations of conduction band minimum and valence band maximum with spin-orbit coupling. The present results suggest that GST-related materials are a new family of strain-induced TI. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02955075
- Volume :
- 97
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Europhysics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 73919657
- Full Text :
- https://doi.org/10.1209/0295-5075/97/27003