\MoS2 Dual-Gate MOSFET With Atomic-Layer-Deposited \Al2\O3 as Top-Gate Dielectric.

We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on 2-D layer-structured molybdenum disulfide ( \MoS2) crystals and \MoS2 dual-gate n-channel MOSFETs with ALD \Al2\O3 as the gate dielectric. Our C– V study of MOSFET structures shows good interface between 2-D \MoS2 crystal and ALD \Al2\O3. Maximum drain currents using back gates and top gates are measured to be 7.07 and 6.42 mA/mm, respectively, at Vds = \2\ \V with a channel width of 3 \mu\m, a channel length of 9 \mu\m, and a top-gate length of 3 \mu\m. We achieve the highest field-effect mobility of electrons using back-gate control to be 517 \cm^2/\V\cdot\s. The highest current on/off ratio is over \10^8. [ABSTRACT FROM AUTHOR]